Ref.No: | 66022700 |
Start date: | 01.12.2014 |
End date: | 01.01.2016 |
Approval date: | 23.12.2014 |
Department: | ELECTRICAL & COMPUTER ENGINEERING |
Sector: | ELECTROMAGNETICS, ELECTROOPTICS AND ELECTRONIC MATERIAL |
Financier: | ΕΣΩΤΕΡΙΚΟ, METAFORA APO PROGRAMMATA 63/ |
Budget: | 9.714,64 € |
Scientific Responsible: | Prof. XANTHAKIS |
Email: | jxanthak@central.ntua.gr |
Description: | THE TUNNELING FIELD-EFFECT TRANSISTOR IS ONE OF THE CANDIDATES TO REPLACE THE TRADITIONAL MOFSET OF THE MICROELECTRONIC ERA. THE THEORY AND SIMULATION OF THE TRANSISTOR IS AT PRESENT AT A RUDIMENTARY LEVEL PARTLY DUE TO ITS FULLY QUANTUM MECHANICAL..... |