QUANTUM SIMULATION OF TUNNEL FET

Ref.No: 66022700
Start date: 01.12.2014
End date: 01.01.2016
Approval date: 23.12.2014
Department: ELECTRICAL & COMPUTER ENGINEERING
Sector: ELECTROMAGNETICS, ELECTROOPTICS AND ELECTRONIC MATERIAL
Financier: ΕΣΩΤΕΡΙΚΟ, METAFORA APO PROGRAMMATA 63/
Budget: 9.714,64 €
Scientific Responsible: Prof. XANTHAKIS
Email: jxanthak@central.ntua.gr
Description: THE TUNNELING FIELD-EFFECT TRANSISTOR IS ONE OF THE CANDIDATES TO REPLACE THE TRADITIONAL MOFSET OF THE MICROELECTRONIC ERA. THE THEORY AND SIMULATION OF THE TRANSISTOR IS AT PRESENT AT A RUDIMENTARY LEVEL PARTLY DUE TO ITS FULLY QUANTUM MECHANICAL.....
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