ELECTRONIC SWITCHING RESISTANCE MEMORIES MADE FROM SiOx AND METALLIC NANOPARTICLES FOR NEUROMORPHIC APPLICATIONS



Ref.No: 68142800
Start date: 01.06.2020
End date: 30.11.2022
Approval date: 28.05.2020
Department: APPLIED MATHEMATICAL & PHYSICAL SCIENCES
Sector: PHYSICS
Financier: ΕΣΠΑ 2014-2020, YPOYRGEIO PAIDEIAS KAI THRHSKEYMATWN
Budget: 50.050,00 €
Public key: Ω9Ι846ΨΖΣ4-Σ5Ω
Scientific Responsible: Prof. TSOUKALAS
Email: dtsouk@central.ntua.gr
Description: IN THIS RESEARCH PROJECT, THE INSERTION OF METALLIC NANOPARTICLES (AG, CU, PT) WITHIN THE SIOX DIELECTRIC MATRIX IS THOROUGHLY INVESTIGATED IN ORDER TO IMPROVE THE STATISTICAL DISPERSION OF THE ELECTRICAL CHARACTERISTICS OF THE MEMORY DEVICES AND REDUCE
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